2N4910 thru 2N4912 (SILICON)
~~CASE 80
- d»
(TO-66)
Medium-power
NPN silicon
transistors designed for driver circuits, switching, and amplifier applications.
Complement to
PNP 2N4898 thru 2N4900.
Collector connected to case MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous*
Base Current - Continuous Total Device Dissipation T C = 25 0 C
Derate above 250 C Operating & Storage Junction
Temperature Range
Symbol 2N4910 2N4911 2N4912
VCEO 40 60
80
VCB VEB IC*
40 60 -5.
0 _1.
0 -4.
0
.
.
IB -1.
0
P D 25
80
.
.
.
.
.
.
.
.
.
-0.
143TJ' Tstg --65 to +200-
Unit
Vdc Vdc Vdc Adc
Adc Watts mW/oC °c
THERMAL CHARACTERISTICS
Char...