2N2949 (SILICON) 2N29S0
NPN silicon annular
transistors for power amplifier and driver applications to 100 MHz.
(TO·l07) 2N2949
2N2950
Collector connected to case; stud isolated from case
MAXIMUM RATINGS-
~~ting
Symbol
Value
Unit
Collector- Base 'V()ltage
Collector-Emitter Voltage
Emitter - Base Voltage
Collector Current (Continuous)
Base Current (Continuous)
RF Input Power (Nom)
RF Output Power (Nom) Total Device Dissipation
(2S0C Case temperature) (Derating Factor above 25°C) Total Device Dissipation at 25° Ambient (Derating Factor above 2S0C)
VCB VCES VEB
IC IB Pin Pout Po
Po
60
60 3.
0
0.
7
100
1.
0
S.
O
6.
0 40
2N2949
0.
5 3.
33
2N2950 0.
7 4.
67
Vdc Vdc Vdc Adc mAdc
Watt Wat...