2N2696 (SILICON) 2N2927
PNP SILICON ANNULAR
TRANSISTORS
designed for use in medium-speed, non-saturated switching applications_
• High Collector-Emitter Breakdown Voltage -
= =BVCEO 25 Vdc @IC 100/!Adc
• High Collector-Base Breakdown Voltage BVCBO = 25 Vdc@ IC = 100/!Adc
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Sase Voltage Emitter-Base Voltage Collector Current -'Continuous Total Device Dissipation@TA = 25°C
Derate above 25°C Total Device Dissipation @Te= 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VeEO VeB VEB
Ie
Po
Po
TJ,Tstg
2N2696 2N2927
25
25
4.
0
500
0.
36 0.
8 2.
06 4_56
1.
2 6.
85
3.
0 17.
1
-65 to +200
Unit Vde Vde Vde mAde ...