2N656 (SILICON) 2N657
NPN SILICON ANNULAR
TRANSISTORS
.
NPN silicon annular
transistor designed for small-signal amplifier and general purpose switching applications.
• High Collector·Emitter Breakdown Voltage -
BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657
• High Emitter-Base Breakdown Voltage -
BVEBO = 8.
0 Vde (Min) @ IE = 250 !lAde
NPN SILICON ANNULAR TRAN~STORS
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ T A - 2SoC
Derate above 2SoC Total Device Dissipation @ Teo:: 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VCEO VCB VEB
PD
PD
TJ,Tstg
2N656 2N657 60 100 60 100 8.
0 1.
0 5.
7...