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MB8287

Part Number MB8287
Manufacturer Fujitsu
Description CMOS 288K-BIT HIGH-SPEED SRAM
Published Nov 15, 2018
Detailed Description April 1990 Edition 2.0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM cO FUJITSU 32K Words x 8 Bits Static Ran...
Datasheet MB8287




Overview
April 1990 Edition 2.
0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM cO FUJITSU 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with parity generator and checker, and fabricated with CMOS technology.
To obtain a smaller chip size, the cell uses NMOS transistors and resistors.
This device is housed in a 300 mil DIP package with low (605 mW max.
) power dissipation.
All pins are TTL compatible and a single +5 V power supply is required.
A separate chip select ~ pin simplffies multipackage systems design by permitting the selection of an individual package when outputs are OR-tied, and t...






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