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MB8287

Part Number	MB8287
Manufacturer	Fujitsu
Description	CMOS 288K-BIT HIGH-SPEED SRAM
Published	Nov 15, 2018
Detailed Description	April 1990 Edition 2.0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM cO FUJITSU 32K Words x 8 Bits Static Ran...
Datasheet	MB8287 PDF File

Overview

April 1990 Edition 2.
0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM cO FUJITSU 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with parity generator and checker, and fabricated with CMOS technology.
To obtain a smaller chip size, the cell uses NMOS transistors and resistors.
This device is housed in a 300 mil DIP package with low (605 mW max.
) power dissipation.
All pins are TTL compatible and a single +5 V power supply is required.
A separate chip select ~ pin simplffies multipackage systems design by permitting the selection of an individual package when outputs are OR-tied, and then automatically powering down the other deselected packages.
The MB8287 offers low power dissipation, low cost, and high performance.
• Organization: 32,768 words x 8 bits • Static operation: no clocks or timing strobe required • Access time: tM -I.
\csl _25 ns max, tACS2 - 14 ns max.
(M...

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