HM2305B P-Channel Enhancement Mode Power MOSFET Description The HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -12V,ID = -4.
1A RDS(ON) 78mΩ @ VGS=-2.
5V RDS(ON) 55mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management D G S Schematic diagram 2305B Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2305B HM 23...

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