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HM2301A

H&M Semiconductor
Part Number HM2301A
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jan 2, 2017
Detailed Description HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301A uses advanced trench technology to provide exce...
Datasheet PDF File HM2301A PDF File

HM2301A
HM2301A

Overview
HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.
5V RDS(ON) < 110mΩ @ VGS=-4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram $V+% Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23/ top view Package Marking And Ordering Information Device Marking Device Device Package A1sHB HM2301A SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum...


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