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HM2301B

H&M Semiconductor
Part Number HM2301B
Manufacturer H&M Semiconductor
Description P-Channel Trench Power MOSFET
Published Jan 2, 2017
Detailed Description HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide exce...
Datasheet PDF File HM2301B PDF File

HM2301B
HM2301B

Overview
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -20V,ID = -2.
5A RDS(ON) < 160mΩ @ VGS=-2.
5V RDS(ON) < 120mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application ● PWM applications ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A12SHB HM2301B SOT-23 R...


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