HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) 140mΩ @ VGS=-2.
5V RDS(ON) 110mΩ @ VGS=-4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 3413 Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 3413 HM3413B...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)