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HM3414

H&M Semiconductor
Part Number HM3414
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM3414 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3414 uses advanced trench technology to provide excell...
Datasheet PDF File HM3414 PDF File

HM3414
HM3414

Overview
HM3414 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 20V,ID = 2.
9A RDS(ON) < 59mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 3D 3414 G1 2S Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23/ top view Package Marking And Ordering Information Device Marking Device...


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