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HM3415B

H&M Semiconductor
Part Number HM3415B
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM3415B P-Channel Enhancement Mode Power MOSFET Description The HM3415B uses advanced trench technology to provide exce...
Datasheet PDF File HM3415B PDF File

HM3415B
HM3415B

Overview
HM3415B P-Channel Enhancement Mode Power MOSFET Description The HM3415B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.
5V RDS(ON) < 47mΩ @ VGS=-4.
5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Schematic diagram 3415 Marking and pin assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package ...


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