HM2309
P-Channel 60V(D-S)
GENERAL DESCRIPTION
The HM2309 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON)≦215mΩ@VGS=-10V
● RDS(ON)≦260mΩ@VGS=-4.
5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
● Capable doing Cu wire bonding
APPLICATIONS
● Power Management ● Portable Equipment ● Battery Powered System ● Load Switch
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Symbol VDS...