HM2309A P-Channel Enhancement Mode Power MOSFET Description The HM2309A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
This device is well suited for use as a load switch or in PWM applications.
General Features ● VDS =-60V,ID =-4A RDS(ON) 120mΩ @ VGS=-10V RDS(ON) 170mΩ @ VGS=-4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Load switch ● PWM application Schematic diagram 60P04Y Marking and pin Assignment SOT-23-3L top view Package Marking and Ordering Information Device Marking 60P04Y Device HM2309A Device Package SOT-23-...

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