Part Number
|
HM4612D |
Manufacturer
|
H&M Semiconductor |
Description
|
N & P-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM4612D
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4612D uses advanced trench technology to provid...
|
Datasheet
|
HM4612D
|
Overview
HM4612D
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS =12V,ID =5A RDS(ON) 32mΩ @ VGS=4.
5V RDS(ON) 42mΩ @ VGS=2.
5V RDS(ON) 80mΩ @ VGS=1.
8V
● P-Channel VDS = -12V,ID = -5A RDS(ON) 74mΩ @ VGS=-4.
5V RDS(ON) 110mΩ @ VGS=-2.
5V RDS(ON) 220mΩ @ VGS=-1.
8V
● Load Switch for Portable Devices
N-channel
P-channel
Pin assignment
Package Marking and Ordering Information
Device Marking
12**
Device
HM4612D
Device Package
DFN2X2-6L
Reel S...
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