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HM4611B

H&M Semiconductor
Part Number HM4611B
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provid...
Datasheet PDF File HM4611B PDF File

HM4611B
HM4611B

Overview
HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features ● N-Channel VDS = 60V,ID =6.
3A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram HM4611B Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity HM4611B HM4611B SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel 2500 units P-Channel Unit Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current Pulsed Drain Current (Note 1) TA=2...


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