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HM4612D

H&M Semiconductor
Part Number HM4612D
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4612D N and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provid...
Datasheet PDF File HM4612D PDF File

HM4612D
HM4612D

Overview
HM4612D N and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features ● N-Channel VDS =12V,ID =5A RDS(ON) <32mΩ @ VGS=4.
5V RDS(ON) <42mΩ @ VGS=2.
5V RDS(ON) < 80mΩ @ VGS=1.
8V ● P-Channel VDS = -12V,ID = -5A RDS(ON) <74mΩ @ VGS=-4.
5V RDS(ON) <110mΩ @ VGS=-2.
5V RDS(ON) < 220mΩ @ VGS=-1.
8V ● Load Switch for Portable Devices N-channel P-channel Pin assignment Package Marking and Ordering Information Device Marking 12** Device HM4612D Device Package DFN2X2-6L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TA=25℃ TA=70℃ Maximum Power Dissipation TA=25℃ Operating Junction and S...


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