Part Number
|
HM4611B |
Manufacturer
|
H&M Semiconductor |
Description
|
N & P-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM4611B
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4611B uses advanced trench technology to provid...
|
Datasheet
|
HM4611B
|
Overview
HM4611B
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 60V,ID =6.
3A RDS(ON) 30mΩ @ VGS=10V
● P-Channel VDS = -60V,ID = -6A RDS(ON) 80mΩ @ VGS=-10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram
HM4611B
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device
Device Package Reel Size
Tape width
Quantity
HM46...
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