HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS = 20V,ID = 2.
8A RDS(ON) 50mΩ @ VGS=2.
5V RDS(ON) 40mΩ @ VGS=4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram A2SHB Marking and pin assignment Application ● Battery protection ● Load switch ● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package...

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