RM NCE N-Channel Enhancement Mode Power MOSFET Description The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
D G General Features ● VDS =60V,ID =5A RDS(ON) 45mΩ @ VGS=10V （Typ：38mΩ） S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package HM5N06R HM5N06R SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)