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HM5N06R

H&M Semiconductor
Part Number HM5N06R
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description RM NCE N-Channel Enhancement Mode Power MOSFET Description The HM5N06R uses advanced trench technology and design to p...
Datasheet PDF File HM5N06R PDF File

HM5N06R
HM5N06R

Overview
RM NCE N-Channel Enhancement Mode Power MOSFET Description The HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
D G General Features ● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package HM5N06R HM5N06R SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage ...


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