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HM5N06AR

H&M Semiconductor
Part Number HM5N06AR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The HM5N06$5 uses advanced trench technology and design to provide e...
Datasheet PDF File HM5N06AR PDF File

HM5N06AR
HM5N06AR

Overview
N-Channel Enhancement Mode Power MOSFET Description The HM5N06$5 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =60V,ID =5A RDS(ON) <35mΩ @ VGS=10V (Typ.
26mΩ) RDS(ON) <45mΩ @ VGS=4.
5V (Typ.
32mΩ) Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply R M '8 D G S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package HM5N06$5 HM5N06$5 SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Paramete...


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