Part Number
|
HM3400DR |
Manufacturer
|
H&M Semiconductor |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Nov 27, 2018 |
Detailed Description
|
HM3400DR
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3400DR uses advanced trench technology to provide ex...
|
Datasheet
|
HM3400DR
|
Overview
HM3400DR
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS = 30V,ID = 8A RDS(ON) 59mΩ @ VGS=2.
5V RDS(ON) 45mΩ @ VGS=4.
5V RDS(ON) 41mΩ @ VGS=10V
D
G
S Schematic diagram
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●PWM applications ●Load switch ●Power management
DFN2X2-6L bottom view
Package Marking And Ordering Information
Device Marking
Device
Device Package...
Similar Datasheet