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HM3400PR

H&M Semiconductor
Part Number HM3400PR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM3400PR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400PR uses advanced trench technology to provide ex...
Datasheet PDF File HM3400PR PDF File

HM3400PR
HM3400PR

Overview
HM3400PR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 30V,ID = 6.
8A RDS(ON) < 60mΩ @ VGS=2.
5V RDS(ON) < 44mΩ @ VGS=4.
5V RDS(ON) < 33mΩ @ VGS=10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management SOT-89-3L top view Package Marking And Ordering Information Device Marking Device Device Package HM3400PR HM3400PR SOT-89-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) ...


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