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HM3400DR

H&M Semiconductor
Part Number HM3400DR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM3400DR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide ex...
Datasheet PDF File HM3400DR PDF File

HM3400DR
HM3400DR

Overview
HM3400DR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 30V,ID = 8A RDS(ON) < 59mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V RDS(ON) < 41mΩ @ VGS=10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management DFN2X2-6L bottom view Package Marking And Ordering Information Device Marking Device Device Package...


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