N-Channel Enhancement Mode Power MOSFET Description The PE0208 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =200V,ID =16A RDS(ON) 300mΩ @ VGS=10V（Typ：260mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PE0208 Schematic diagram Marking and pin assignment TO-252 -2Ltop view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol ...

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