N-Channel Enhancement Mode Field Effect
Transistor
■ General Description
VDSS 20V
Product Summary ID
3.
6A
RDS(ON)(mΩ)TYP 33 @ VGS= 4.
5V 52 @ VGS= 2.
5V
LN2300
■ Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23-3L/B package
■ Package
SOT-23-3L/B
3
D
D
■ Ordering Information
GS
12
SOT-23-3L/B (Top View)
G S
Part Number LN2300
Storage Temperature -55°C to +150°C
Package SOT-23-3L/B
Devices Per Reel 3000
■ Absolute Maximum Ratings
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃-pulse db
Drain-source Diode forward current Maximum power dissipation
Operating junction Temperature ra...