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LN2306LT3G

Part Number	LN2306LT3G
Manufacturer	LRC
Description	30V N-Channel Enhancement-Mode MOSFET
Published	Oct 17, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)H...
Datasheet	LN2306LT3G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free.
●FEATURES 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.
8A = 38m Ω 3)RDS(ON), Vgs@4.
5V, Ids@5.
0A = 43m Ω 4)RDS(ON), Vgs@2.
5V, Ids@4.
0A = 62m Ω ●DEVICE MARKING AND ORDERING INFORMATION Device LN2306LT1G LN2306LT3G Marking N06 N06 Shipping 3000/Tape&Reel 10000/Tape&Reel LN2306LT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Pulsed Drai...

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