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LN2306LT1G

Part Number	LN2306LT1G
Manufacturer	LRC
Description	30V N-Channel Enhancement-Mode MOSFET
Published	Oct 17, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)H...
Datasheet	LN2306LT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free.
●FEATURES 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.
8A = 38m Ω 3)RDS(ON), Vgs@4.
5V, Ids@5.
0A = 43m Ω 4)RDS(ON), Vgs@2.
5V, Ids@4.
0A = 62m Ω ●DEVICE MARKING AND ORDERING INFORMATION Device LN2306LT1G LN2306LT3G Marking N06 N06 Shipping 3000/Tape&Reel 10000/Tape&Reel LN2306LT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Pulsed Drain Current (Note1) Maximum Power Dissipation Operating and Storage Temperature Range Junction to Ambient Thermal Resistance(PCB mounted)(Note 2) Symbol Limits Unit VDSS 30 V VGS ±12 V ID 5.
8 A IDM 30 A PD 1.
4 W TJ, Tstg –55 to +150 °C RθJA 140 °C/W 1.
Repetitive Rating: Pulse width limited by the Maximum junction temperation 2.
1-in2 2oz Cu PCB board July , 2015 Rev .
B 1/4 LESHAN RADIO COMPANY, LTD.
LN2306LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC Parameter Drain−to−Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current Symbol V(BR)DSS VGS(TH) IDSS IGSS Drain−to−Source On Resistance RDS(on) Forward Diode Voltage Forward Transconductance VSD gFS DYNAMIC(Note 3) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Ciss Coss Crss QG QGS QGD td(on) tr td(off) tf 3.
Pulse test: pulse width ≦ 300us, duty cycle≦ 2% Min.
30 0.
7 – – – – – 10 – – – – – – – – – – Typ.
– – – – 31 34 45 15 Max.
Unit Conditions – V VGS = 0 V, ID = 250 μA 1.
4 V VGS = VDS, ID = 250 μA -1 μA VDS=24V, VGS=0V ±100 nA VDS = 0 V, VGS = ±12 V 38 VGS = 10 V, ID =5.
8 A 43 m Ω VGS = 4.
5 V, ID =5 A 6...

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