P-Channel Enhancement Mode Field Effect
Transistor
LN2305
■ General Description
VDSS -20V
Product Summary ID
-0.
45A -0.
35A
RDS(ON)(mΩ)TYP 135 @ VGS=-4.
5V 180 @ VGS=-2.
5V
■ Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23-3L/B package
■ Package
SOT-23-3L/B
3
D
S
■ Ordering Information
GS
12
SOT-23-3L/B (Top View)
G D
Part Number LN2305
Storage Temperature -55°C to +150°C
Package SOT-23-3L/B
Devices Per Reel 3000
■ Absolute Maximum Ratings
parameter
Drain-source voltage
Gate-source voltage
Coutinuous drain current (Tj=150℃)
TA=25℃ TA=80℃
Pulsed drain current
Drain-source Diode forward current
Power dissip...