N-Channel Enhancement Mode Field Effect
Transistor
■ General Description
VDSS 20V
Product Summary ID
4.
5A
■ Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23-3L package
■ Package
Schematic diagram
D
G S
RDS(ON)(mΩ)TYP 22 @ VGS= 4.
5V 40 @ VGS= 2.
5V
LN2312
Pin configuration Pin Name G D S
■ Ordering Information
SOT23-3L 1 3 2
Description Gate Drain Source
Part Number LN2312MR
Storage Temperature -55°C to +150°C
Package SOT-23-3L
Devices Per Reel 3000
■ Absolute Maximum Ratings
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃
-pulse db Maximum power dissipation Operating junctio...