Alfa-MOS Technology AFN1990S 60V N-Channel Enhancement Mode MOSFET General Description AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features 60V/40A,RDS(ON)= 7.
8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.
8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin Description ( TO-263-2L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marki...

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