DatasheetsPDF.com

AFN1990S

Alfa-MOS
Part Number AFN1990S
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology AFN1990S 60V N-Channel Enhancement Mode MOSFET General Description AFN1990S, N-Channel enhancement...
Datasheet PDF File AFN1990S PDF File

AFN1990S
AFN1990S

Overview
Alfa-MOS Technology AFN1990S 60V N-Channel Enhancement Mode MOSFET General Description AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features 60V/40A,RDS(ON)= 7.
8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.
8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin Description ( TO-263-2L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marking Package 1990S AFN1990ST263RG AAAAAA TO-263-2L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1990ST263RG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.
Rev.
A Jan.
2014 Description Gate Source Drain Unit Tape & Reel Quantity 800 EA www.
alfa-mos.
com Page 1 Alfa-MOS T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)