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AFN1998S

Alfa-MOS
Part Number AFN1998S
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology AFN1998S 100V N-Channel Enhancement Mode MOSFET General Description AFN1998S, N-Channel enhancemen...
Datasheet PDF File AFN1998S PDF File

AFN1998S
AFN1998S

Overview
Alfa-MOS Technology AFN1998S 100V N-Channel Enhancement Mode MOSFET General Description AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-263-2L ) Features 100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Part Marking Package 1998S AFN1998ST263RG AAAAAA TO-263-2L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1998ST263RG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.
Rev.
A Jan.
2014 Description Gate Source Drain Unit Tape & Reel Quantity 800 EA www.
alfa-m...


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