BM2300
N Channel Enhancement Mode MOSFET
4A
DESCRIPTION
The BM2300 is the N-Channel logic enhancement mode power field effect
transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L
3 D GS
12
1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23-3L
FEATURE
z 20V/6.
0A, RDS(ON) = 27mΩ (Typ.
) @VGS = 10V
z 20V/5.
0A, RDS(ON) = 30mΩ @VGS...