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BM2341

Bookly
Part Number BM2341
Manufacturer Bookly
Description P-Channel Enhancement Mode MOSFET
Published Dec 19, 2018
Detailed Description BM2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION BM2341 is the P-Channel logic enhancement mode power field ...
Datasheet PDF File BM2341 PDF File

BM2341
BM2341

Overview
BM2341 P Channel Enhancement Mode MOSFET -3.
5A DESCRIPTION BM2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3 D GS 12 1.
Gate 2.
Source 3.
Drain FEATURE z -20V/-3.
3A, RDS(ON) = 36m-ohm (Typ.
) @VGS = -10V z -20V/-2.
8A, RDS(ON) = 45m-ohm @VGS = -4.
5V z -20V/-2.
3A, RDS(ON) = 55m-ohm @VGS = -1.
8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design PART MARKING SOT-23-3L 3 41YA 12 Y: Year Code A: Process Code ORDERING INFORMATION ...


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