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BM2300

Bookly
Part Number BM2300
Manufacturer Bookly
Description N-Channel Enhancement Mode MOSFET
Published Dec 19, 2018
Detailed Description BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field...
Datasheet PDF File BM2300 PDF File

BM2300
BM2300

Overview
BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3 D GS 12 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23-3L FEATURE z 20V/6.
0A, RDS(ON) = 27mΩ (Typ.
) @VGS = 10V z 20V/5.
0A, RDS(ON) = 30mΩ @VGS = 4.
5V z 20V/4.
5A, RDS(ON) = 34mΩ @VGS = 2.
5V z 20V/4.
0A, RDS(ON) = 40mΩ @VGS = 1.
8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and Maximum DC current capability z SOT-23-3L package design 3 42YA 12 Y: Year Code A: Process Code ORDERING INFORMATION...


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