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SGSP316 SGSP317
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE
SGSP316 SGSP317
Voss 250 V 200 V
ROS(on) 1.
20 0.
750
10 5A 6A
• HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) • • EASY DRIVE - REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • DC SWITCH
N - channel enhancement mode POWER MaS field effect
transistors.
Easy drive and very fast switching times make these POWER MaS
transistors ideal for high speed switching applications.
Typical uses are in telecommunications, switching power supplies and as a DC switch.
TO-220
INTERNAL SCHEMATIC DIAGRAM
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