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SGSP341

STMicroelectronics
Part Number SGSP341
Manufacturer STMicroelectronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Published Dec 30, 2018
Detailed Description / T 7 SCS-THOMSON [*03(m i(graKi(gS SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP341 V DSS 400...
Datasheet PDF File SGSP341 PDF File

SGSP341
SGSP341

Overview
/ T 7 SCS-THOMSON [*03(m i(graKi(gS SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP341 V DSS 400 V ^DS(on) 20 n b 0.
6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE N - channel enhancement mode POWER MOS field effect transistor.
Easy drive and very fast switch­ ing times make this POWER MOS transistor ideal for high speed switching applications.
Typical ap­ plications include motor starter and drive circuits for power bipolar transistors.
TO-220 INTERNAL SCHEMATIC DIAGRAM ° GO- S ABSOLUTE MAXIMUM RATINGS V DS V dgr V GS b b *dm (*) •dlm O Plot T tg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.
) at Tc = 25°C Drain current (cont.
) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc < 2 5 °C Derating factor Storage temperature Max.
operating jun...


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