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SGSP301

STMicroelectronics
Part Number SGSP301
Manufacturer STMicroelectronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Published Dec 30, 2018
Detailed Description rrj * 7 W -» SGS-THOMSON RjflDeMlILligirmOD^i SGSP301 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP301...
Datasheet PDF File SGSP301 PDF File

SGSP301
SGSP301

Overview
rrj * 7 W -» SGS-THOMSON RjflDeMlILligirmOD^i SGSP301 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP301 V DSS 100 V R DS(on) 1.
4 Q *D 2.
0 A • HIGH SPEED SWITCHING APPLICATIONS • GENERAL PURPOSE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE SWITCHING N - channel enhancement mode POWER MOS field effect transistor.
Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications.
Typical appli­ cations include general purpose low voltage swit­ ching, solenoid driving, motor and lamp control, switching power supplies, and driving, bipolar po­ wer switching transistors.
TO-220 INTERNAL SCHEMATIC DIAGRAM CO o > ABSOLUTE MAXIMUM RATINGS Vdgr VGS *D •d ■d m n ■d l m ( * ) Ptot "■"stg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.
) at Tc = 25°C Drain current (cont.
) a...


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