Part Number
|
G1003A |
Manufacturer
|
GFD |
Description
|
Transistor |
Published
|
Jan 6, 2019 |
Detailed Description
|
Description
The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It ...
|
Datasheet
|
G1003A
|
Overview
Description
The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protected.
General Features
● VDS = 100V,ID = 5A RDS(ON) 145mΩ @ VGS=10V (Typ:135 mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
G1003A
D G
S
Schematic diagram
SOT23-3L view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VG...
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