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G1007

Part Number	G1007
Manufacturer	GFD
Description	MOSFET
Published	Mar 12, 2019
Detailed Description	GOFORD General Description The G1007. combines advanced trench MOSFET technology with a low resistance package to provi...
Datasheet	G1007 PDF File

Overview

GOFORD General Description The G1007.
combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for power switching application and LED backlighting.
Features VDSS 100V RDS(ON) @10V (typ) 70mΩ ID 7A ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● LED backlighting G1007.
Schematic Diagram Marking and pin Assignment Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) PD EAS Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single Pulse Avalanche Energy (Note 2) TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature 2.
EAS condition:TJ=25℃,VDD=50V,VG=10V, RG=25Ω ...

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