Part Number
|
SE3080K |
Manufacturer
|
Sino-IC |
Description
|
N-Channel MOSFET |
Published
|
Feb 22, 2019 |
Detailed Description
|
SE3080A/K N-Channel Enhancement-Mode MOSFET
Revision: A
General Description Advanced trench technology to provide
exce...
|
Datasheet
|
SE3080K
|
Overview
SE3080A/K N-Channel Enhancement-Mode MOSFET
Revision: A
General Description Advanced trench technology to provide
excellent RDS(ON), low gate charge and low operation voltage.
This device is suitable for using as a load switch or in PWM applications.
Simple Drive Requirement Small Package Outline Surface Mount Device
Features
For a single MOSFET
VDS = 30V RDS(ON) = 4.
5mΩ @ VGS=10V(SE3080A) RDS(ON) = 4.
5mΩ @ VGS=10V(SE3080K)
Pin configurations
See Diagram below
TO-252
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation @TA=25℃
Derating factor
Single pulse avalanche energy
Operating Junct...
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