DatasheetsPDF.com

SE3080G

Sino-IC
Part Number SE3080G
Manufacturer Sino-IC
Description N-Channel MOSFET
Published Feb 22, 2019
Detailed Description SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology an...
Datasheet PDF File SE3080G PDF File

SE3080G
SE3080G

Overview
SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of application Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.
5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5*6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rat...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)