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SE3080A

Part Number	SE3080A
Manufacturer	Sino-IC
Description	N-Channel MOSFET
Published	Feb 22, 2019
Detailed Description	SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide exce...
Datasheet	SE3080A PDF File

Overview

SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage.
This device is suitable for using as a load switch or in PWM applications.
 Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.
5mΩ @ VGS=10V(SE3080A)  RDS(ON) = 4.
5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junct...

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