Part Number
|
100N03 |
Manufacturer
|
GFD |
Description
|
MOSFET |
Published
|
Mar 12, 2019 |
Detailed Description
|
DESCRIPTION
The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . ...
|
Datasheet
|
100N03
|
Overview
DESCRIPTION
The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .
It can be used in a wide Vanety of applications .
100N03
VDS
30V
RDS(ON)
ID
3.
5mΩ 100A
GENERAL FEATURES
� VDS = 30 V, ID = 100 A RDS(ON) 5.
5 mΩ @ VGS = 10 V (Typ:4mΩ )
� High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability
Application
� Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply
Ordering Information
PART NUMBER PACKAGE BR...
Similar Datasheet