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100N10

ETC
Part Number 100N10
Manufacturer ETC
Description N-Channel PowerTrench MOSFET
Published Nov 9, 2018
Detailed Description 100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • ...
Datasheet PDF File 100N10 PDF File

100N10
100N10

Overview
100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features • RDS(on) = 8.
2mΩ ( Typ.
)@ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handing capability • RoHS compliant Applications DC to DC converters / Synchronous Rectification Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
D G DS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 75oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum...


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