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100N03

KIA
Part Number 100N03
Manufacturer KIA
Description N-CHANNEL MOSFET
Published Mar 6, 2020
Detailed Description KIA 90A，30V N-CHANNEL MOSFET SEMICONDUCTORS S 100N03 1.Description This Power MOSFET is produced using KIA`s advanced ...
Datasheet PDF File 100N03 PDF File

100N03
100N03

Overview
KIA 90A，30V N-CHANNEL MOSFET SEMICONDUCTORS S 100N03 1.
Description This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
2.
Features n RDS(on)=3.
1mΩ@ VGS=10V n Improved dv/dt capability n Fast switching n Green device available 3.
Symbol Pin Function 1 Gate 2 Drain 3 Source 1 of 5 Rev 1.
0 OCT 2014 KIA 90A，30V N-CHANNEL MOSFET SEMICONDUCTORS S 4.
Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulse drain current (note 1) TC=25ºC TC=100ºC TC=25ºC Avalanche current (note 2) Avalanche energy, (note 2) TC=25 ºC Maximum power dissipation Derate above 25 ºC Junction & storage temperature range Symbol VDSS VGSS ID IDP IAS EAS PD TJ,TSTG 100N03 (TA=25°C,unless otherwise noted) Rating Units 30 V +20 V 90 A 57 A 360 A 50 A 125 mJ 88 W 0.
59 W/℃ -55-175 ℃ 5.
Thermal characteristics Parameter Thermal resistance, Junction-ambient Thermal resistance, Junction-case Symbol RθJA RθJC Rating 62 1.
7 Unit ºC/W ºC/W 2 of 5 Rev 1.
0 OCT 2014 KIA 90A，30V N-CHANNEL MOSFET 100N03 SEMICONDUCTORS 6S .
Electrical characteristics Parameter Drain-source breakdown voltage BVDSS temperature coefficient Symbol BVDSS △BVDSS /△TJ Zero gate voltage drain current IDSS Gate threshold voltage VGS(th) temperature coefficient VGS(th) △VGS(th) Test Conditions VGS=0V,IDS=250μA (TA=25°C,unless otherwise noted) Min Typ Max Units 30 - - V Reference to 25°C, ID=1mA - 0.
03 - V/°C VDS=30V, VGS=0V, TJ=25°C VDS=24V, VGS=0V, TJ=125°C - -1 μA - 10 VDS=VGS, ID=250μA 1.
2 1.
6 2.
5 V VDS=VGS, ID=250μA - -5 - mV/°C Gate leakage current IGSS Drain-s...


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