MRF422
The RF Line
NPN Silicon Power
Transistor 150W(PEP), 30MHz, 28V
Designed primarily for applications as a high–power linear amplifier from 2.
0 Product Image to 30 MHz.
Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40%
Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.
) 100% tested for load mismatch at all phase angles with 30:1 VSWR
Rev.
V1
CASE 211–11, STYLE 1
1
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