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MRF422

Tyco Electronics
Part Number MRF422
Manufacturer Tyco Electronics
Description The RF Line NPN Silicon RF Power Transistor
Published Sep 20, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF422/D The RF Line NPN Silicon RF Power Transistor Designed pri...
Datasheet PDF File MRF422 PDF File

MRF422
MRF422


Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF422/D The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.
0 to 30 MHz.
• Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 150 W (PEP) — IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MRF422 150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstanding Current — 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 40 85 3.
0 20 30 290 1.
66 –65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 35 85 85 3.
0 — — — — — — — — — — 20 Vdc Vdc Vdc Vdc mAdc (continued) REV 6 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.
0 Adc, VCE = 5.
0 Vdc) hFE 15 30 120 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.
0 MHz) Cob — 420 — pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.
7 Adc, ICQ = 150 mAdc, f = 30, 30.
001 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 150 ...


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